SB85 datasheet(1/1 Pages) SSE

Part #	SB85

Description	SILICON SCHOTTKY DETECTING DIODE

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Manufacturer	SSE [Shanghai Sunrise Electronics]

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SHANGHAI SUNRISE ELECTRONICS CO., LTD.

FEATURES

• Small glass structure ensures high reliability

• Fast switching

• Low leakage

• High temperature soldering guaranteed:

250

oC/10S/9.5mm lead length

at 5 lbs tension

MECHANICAL DATA

• Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

• Case: Glass,hermetically sealed

• Polarity: Color band denotes cathode

• Mounting position: Any

MAXIMUM RATINGS AND CHARACTERISTICS

(Ratings at 25

oC ambient temperature unless otherwise specified)

RATINGS

Reverse Voltage

VR

V

Forward Current (peak)

IFM

mA

Forward Current (D.C.)

IF

mA

IF=10mA

VF1

V

IF=100mA

VF2

V

Reverse Current (VR=30V)

IR

µA

Capacitance

(Note 1)

Ct

pF

Detection Effectiveness

(Note 2)

Operating Junction and Storage

Temperature Range

Notes:

1. VR=10V, f=1MHz

2. Vm=3V(peak), f=30MHz, RL=3.9K

Ω, Ct=10pF.

http://www.sse-diode.com

SYMBOL

VALUE

UNITS

Typ.

Max.

50

150

30

0.4

0.8

60%

3

6

FORWARD CURRENT: 150mA

REVERSE VOLTAGE: 50V

SB85

SILICON SCHOTTKY

DETECTING DIODE

Forward Voltage (D.C.)

TJ,TSTG

-55

+125

oC

TECHNICAL

SPECIFICATION

1.0 (25.4)

MIN.

.018 (0.46)

.022 (0.56)

.120 (3.0)

.200 (5.1)

1.0 (25.4)

MIN.

DIA.

.060 (1.5)

.090 (2.3) DIA.

DIA.

1.0 (25.4)

MIN.

.050 (1.27)

.075 (1.91)

.018 (0.46)

.022 (0.56)

.085 (2.2)

.120 (3.0)

1.0 (25.4)

MIN.

DO - 34

DO - 35

Dimensions in inches and (millimeters)

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