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ALD1108ESCL Datasheet(PDF) 2 Page - Advanced Linear Devices |
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ALD1108ESCL Datasheet(HTML) 2 Page - Advanced Linear Devices |
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2 / 14 page ![]() ALD1108E/ALD1110E Advanced Linear Devices 2 of 14 FEATURES • Electrically Programmable Analog Device • Proven, non-volatile CMOS technology • Operates from 2V, 3V, 5V to 10V • Flexible basic circuit building block and design element • Very high resolution -- average e-trim voltage resolution of 0.1mV • Wide dynamic range -- current levels from 0.1 µA to 3000 µA • Voltage adjustment range from 1.000V to 3.000V in 0.1mV steps • Typical 10-year drift of less than 2mV • Usable in voltage mode or current mode • High input impedance -- 1012 Ω • Very high DC current gain -- greater than 109 • Device operating current has positive temperature coefficient range and negative temperature coefficient range with cross-over zero temperature coefficient current level at 68 µA • Tight matching and tracking of on-resistance between different devices with e-trim • Very low input currents and leakage currents • Low cost, monolithic technology • Application-specific or in-system programming modes • Opptional user software-controlled automation • Opptional e-trim of any standard/custom configuration • Micropower operation • Available in standard PDIP, SOIC and hermetic CDIP packages • Suitable for matched-pair balanced circuit configuration • Suitable for both coarse and fine trimming, as well as matched MOSFET array applications • RoHS compliant APPLICATIONS • Precision PC-based electronic calibration • Automated voltage trimming or setting • Remote voltage or current adjustment of inaccessible nodes • PCMCIA based instrumentation trimming • Electrically adjusted resistive load • Temperature compensated current sources and current mirrors • Electrically trimmed/calibrated current sources • Permanent precision preset voltage level shifter • Low temperature coefficient voltage and/or current bias circuits • Multiple preset voltage bias circuits • Multiple channel resistor pull-up or pull-down circuits • Microprocessor based process control systems • Portable data acquisition systems • Battery operated terminals and instruments • Remote telemetry systems • E-trimmable gain amplifiers • Low level signal conditioning • Sensor and transducer bias currents • Neural networks Optional EPAD Threshold Voltage Trimming by User The basic EPAD MOSFET device is a monotonically adjustable device, which means the device can normally be e-trimmed to increase in threshold voltage and to decrease in drain-on current as a function of a given input bias voltage. Used as an in-circuit element for trimming or setting a combination of voltage, current and/or on- resistance characteristics, it can be set up to be e-trimmed remotely and automatically. Once e-trimmed, the set voltage and current levels are stored indefinitely inside the device as a nonvolatile stored charge, which is not affected during normal operation of the device, even when power is turned off. A given EPAD device can be adjusted many times to continually increase its threshold voltage. A pair of EPAD devices can also be connected differentially such that one device is used to adjust a parameter in one direction and the other device is used to adjust the same parameter in the other direction. The ALD1108E/ALD1110E can be e-trimmed with an ALD EPAD programmer to obtain the desired voltage and current levels. They can also be e-trimmed as an active in- system element in a user system, via user designed interface circuitry. PN1, PN2, etc., are pins required for optional e-trim of respective MOSFET devices. If unused, these pins are to be connected to V- or ground. For more information, see Application Note AN1108. BENEFITS (cont.) • Usable in environmentally sealed circuits • No mechanical moving parts -- high G-shock tolerance • Improved reliability, dependability, dust and moisture resistance • Cost and labor savings • Small footprint for high board density applications |
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