Mechanical data

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MIL-STD-750, Method 2026

Epoxy:UL94-V0 rated flame retardant

DO-214AB / SMC

Package outline

Page 2

Chip Silicon Rectifier

Formosa MS

Features

Batch process design, excellent power dissipation offers

better reverse leakage current and thermal resistance.

Low profile surface mounted application in order to

optimize board space.

High current capability.

High surge current capability.

Glass passivated chip junction.

Lead-free parts meet RoHS requirments.

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SFM31 THRU SFM38

3.0A Surface Mount Super

Fast Rectifiers-50-600V

PARAMETER

CONDITIONS

Forward rectified current

Forward surge current

Reverse current

Diode junction capacitance

Storage temperature

O

Ambient temperature = 50 C

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

f=1MHz and applied 4V DC reverse voltage

Symbol

MIN.

TYP.

MAX.

UNIT

I

O

I

FSM

I

R

C

J

T

STG

A

A

μA

pF

3.0

100

5.0

+175

-65

O

V

= V

T = 25 C

R

RRM

J

O

V

= V

T = 125 C

R

RRM

J

45

100

SFM31

SFM32

SFM33

50

100

150

35

70

105

SYMBOLS

V

RRM

(V)

V

RMS

V

R

(V)

(V)

*1

*2

*3

*1 Repetitive peak reverse voltage

*2 RMS voltage

*3 Continuous reverse voltage

*4 Maximum forward voltage@I =3.0A

F

*5 Maximum Reverse recovery time, note 1

V

F

(V)

*4

SFM34

SFM35

200

300

140

210

1.70

-55 to +150

SFM36

SFM37

400

500

280

350

35

50

100

150

200

300

400

500

0.95

1.25

SFM38

600

600

420

O

( C)

Operating

temperature

T ,

J

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

Issued Date

Revised Date

Revision

Page.

0.272(6.9)

0.248(6.3)

0.012(0.3) Typ.

0.189(4.8)

0.165(4.2)

0.098(2.5)

0.075(1.9)

0.048 (1.2) Typ.

0.048(1.2) Typ.

Dimensions in inches and (millimeters)

SMC

DS-121405

2008/02/10

2010/03/10

D

7

t

rr

(ns)

*5

A