VS-ST230SPbF Series

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Vishay Semiconductors

Revision: 05-Mar-12

3

Document Number: 94399

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

TRIGGERING

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

TYP.

MAX.

Maximum peak gate power

10.0

W

Maximum average gate power

2.0

Maximum peak positive gate current

3.0

A

Maximum peak positive gate voltage

20

V

Maximum peak negative gate voltage

5.0

DC gate current required to trigger

Maximum required gate

trigger/current/voltage are

the lowest value which will

trigger all units 12 V anode

to cathode applied

180

-

90

150

mA

40

-

DC gate voltage required to trigger

2.9

-

V

1.8

3.0

1.2

-

DC gate current not to trigger

Maximum gate current/

voltage not to trigger is the

maximum value which will

not trigger any unit with rated

10

mA

DC gate voltage not to trigger

0.25

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum operating junction

temperature range

- 40 to 125

°C

Maximum storage temperature range

- 40 to 150

Maximum thermal resistance,

junction to case

DC operation

0.10

K/W

Maximum thermal resistance,

case to heatsink

Mounting surface, smooth, flat and greased

0.04

Mounting torque, ± 10 %

Non-lubricated threads

31

(275)

N · m

(lbf

in)

Lubricated threads

24.5

(210)

Approximate weight

280

g

Case style

See dimensions - link at the end of datasheet

TO-209AB (TO-93)

R

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION

RECTANGULAR CONDUCTION

TEST CONDITIONS

UNITS

180°

0.016

0.012

K/W

120°

0.019

0.020

90°

0.025

0.027

60°

0.036

0.037

30°

0.060

0.060