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CPH6341 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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CPH6341 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
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1 / 7 page ![]() CPH6341 No. A1084-1/7 Features • Low ON-resistance • High-speed switching • 4V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID --5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --20 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Package Dimensions unit : mm (typ) 7018A-003 Ordering number : ENA1084A 61312 TKIM/30508PE TIIM TC-00001220 SANYO Semiconductors DATA SHEET CPH6341 P-Channel Silicon MOSFET General-Purpose Switching Device Applications http://semicon.sanyo.com/en/network Product & Package Information • Package : CPH6 • JEITA, JEDEC : SC-74, SOT-26, SOT-457 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking Electrical Connection 3 4 1, 2, 5, 6 TL 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 3 2 1 64 5 2.9 0.05 0.4 0.15 0.95 CPH6341-TL-E |
Similar Part No. - CPH6341_12 |
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Similar Description - CPH6341_12 |
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