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EGF1T Datasheet(PDF) 1 Page - Shenzhen Taychipst Electronic Co., Ltd |
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EGF1T Datasheet(HTML) 1 Page - Shenzhen Taychipst Electronic Co., Ltd |
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1 / 2 page ![]() 1300V 1.0A EGF1T 1 of 2 Web Site: www.taychipst.com FEATURES E-mail: sales@taychipst.com MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS MECHANICAL DATA Surface Mount Glass Passivated Ultrafast Rectifier • Cavity-free glass-passivated junction • Ideal for automated placement • Ultrafast reverse recovery time • Low switching losses, high efficiency • Avalanche surge energy capability • Meets environmental standard MIL-S-19500 • Meets MSL level 1, per J-STD-020, LF maximum peak of 250 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Case: DO-214BA, molded plastic over glass body Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: Color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL EGF1T UNIT Device marking code ET Maximum repetitive peak reverse voltage VRRM 1300 V Maximum RMS voltage VRMS 910 V Maximum DC blocking VDC 1300 V Maximum average forward rectified current IF(AV) 1.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 20 A Non-repetitive avalanche energy at TA = 25 °C, IAS = 1 A, L = 30 mH EAS 15 mJ Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms Note: (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.95 x 0.95" (24 x 24 mm) copper pad areas ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL EGF1T UNIT Maximum instantaneous forward voltage (1) 1.0 A TJ = 25 °C VF 3.0 V Maximum DC reverse current (2) VRM TJ = 25 °C TJ = 125 °C IR 5.0 50 µA Typical reverse recovery time IF = 0.5 A, IR =1.0 A, Irr = 0.25 A trr 75 ns Typical junction capacitance 4.0 V, 1 MHz CJ 8.0 pF THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL EGF1T UNIT Typical thermal resistance (1) RθJA RθJL 50 20 °C/W |
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