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MPF4393RLRPG Datasheet(PDF) 5 Page - ON Semiconductor |
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MPF4393RLRPG Datasheet(HTML) 5 Page - ON Semiconductor |
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5 / 6 page ![]() MPF4392, MPF4393 http://onsemi.com 5 IDSS, ZERO-GATE VOLTAGE DRAIN CURRENT (mA) 20 10 30 40 50 30 40 50 60 70 20 0 10 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 70 60 80 90 100 80 90 100 110 120 130 140 150 NOTE 2 The Zero−Gate−Voltage Drain Current (IDSS), is the principle determinant of other J−FET characteristics. Figure 10 shows the relationship of Gate−Source Off Voltage (VGS(off)) and Drain−Source On Resistance (rds(on)) to IDSS. Most of the devices will be within ±10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rds(on) and VGS range for an MPF4392 The electrical characteristics table indicates that an MPF4392 has an IDSS range of 25 to 75 mA. Figure 10 shows rds(on) = 52 W for IDSS = 25 mA and 30 W for IDSS 75 mA. The corresponding VGS values are 2.2 V and 4.8 V. Figure 10. Effect of IDSS On Drain−Source Resistance and Gate−Source Voltage Tchannel = 25°C rDS(on) @ VGS = 0 VGS(off) |
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