Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

STP4407 Datasheet(PDF) 3 Page - Stanson Technology

Part # STP4407
Description  The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  STANSON [Stanson Technology]
Direct Link  http://www.stansontech.com
Logo STANSON - Stanson Technology

STP4407 Datasheet(HTML) 3 Page - Stanson Technology

  STP4407 Datasheet HTML 1Page - Stanson Technology STP4407 Datasheet HTML 2Page - Stanson Technology STP4407 Datasheet HTML 3Page - Stanson Technology STP4407 Datasheet HTML 4Page - Stanson Technology STP4407 Datasheet HTML 5Page - Stanson Technology STP4407 Datasheet HTML 6Page - Stanson Technology  
Zoom Inzoom in Zoom Outzoom out
 3 / 6 page
background image
STP
STP
STP
STP4
4
4
44
4
4
407
07
07
07
P Channel Enhancement Mode MOSFET
-
12A
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294
FAX: (650) 9389295
Copyright © 2007, Stanson Corp.
STP4407 2009. V1
3
ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-Source
Breakdown Voltage
V(BR)DSS
VGS=0V,ID=-250uA
-30
V
Gate Threshold
Voltage
VGS(th)
VDS=VGS,ID=-250uA
-1.0
-3.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±25V
±100
nA
Zero Gate Voltage
Drain Current
IDSS
TJ=55℃
VDS=-30V,VGS=0V
-1
uA
VDS=-30V,VGS=0V
-5
On-State Drain
Current
ID(on)
VDS=-5V,VGS=-10V
-60
A
Drain-source On-
Resistance
RDS(on)
VGS=-20V,ID=-12A
VGS=-10V,ID=-12A
VGS=-5V, ID=-10A
9
10
15
mΩ
Forward
Transconductance
gfs
VDS=-5V,ID=-10A
26
S
Diode Forward Voltage
VSD
IS=-1.0A,VGS=0V
-1
V
Dynamic
Dynamic
Dynamic
Dynamic
Total Gate Charge
Qg
VDS=-15V,VGS=0V
f=1MHz
30
nC
Gate-Source Charge
Qgs
4.3
Gate-Drain Charge
Qgd
10
Input Capacitance
Ciss
VDS ==-15V,VGS=0V
f=1MHz
2076
2500
pF
Output Capacitance
Coss
400
Reverse
TransferCapacitance
Crss
302
Turn-On Time
td(on)
tr
VDD=15V,RL=1.25Ω
ID=-1A,VGEN=-10V
RG=3Ω
10.4
nS
24
Turn-Off Time
td(off)
tf
12.6
12



Html Pages

1 2 3 4 5 6


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com