STP6621 datasheet(3/6 Pages) STANSON

Part #	STP6621

Description	STP6621 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

PDF	6 Pages

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Manufacturer	STANSON [Stanson Technology]

Direct Link	http://www.stansontech.com

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3 / 6 page

STP6621

P Channel Enhancement Mode MOSFET

-18.0A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP6621 2010. V1

ELECTRICAL CHARACTERISTICS

( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min

Typ

Max Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=-250uA

-60

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250 uA

-0.8

-2.5

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

±100

Zero Gate Voltage Drain

Current

IDSS

VDS=-48V,VGS=0V

-1

VDS=-48V,VGS=0V

TJ=85℃

-10

On-State Drain Current

ID(on)

VDS=-5V,VGS=10V

-18

Drain-source On-Resistance

RDS(on)

VGS=-10V, ID=-10A

VGS=-4.5V, ID=-8A

0.023

0.028

0.030

0.038

Forward Tran Conductance

gfs

VDS=-5V,ID=-6.7A

Diode Forward Voltage

VSD

IS=-2.3A,VGS=0V

-0.7

-1.0

Dynamic

Total Gate Charge

VDS=-30V,VGS=-10

ID≡-6.2A

Gate-Source Charge

Qgs

9.2

Gate-Drain Charge

Qgd

9.3

Input Capacitance

Ciss

VDS =-30V,VGS=0V

f=1MHz

2410

Output Capacitance

Coss

179

Reverse TransferCapacitance

Crss

125

Turn-On Time

td(on)

VDS=-30V,RL=4.7Ω

VGS=-10V,RGEN=3Ω

9.8

6.1

Turn-Off Time

td(off)

12.9

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