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STP9235 Datasheet(PDF) 3 Page - Stanson Technology

Part # STP9235
Description  STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
PDF  6 Pages
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Manufacturer  STANSON [Stanson Technology]
Direct Link  http://www.stansontech.com
Logo STANSON - Stanson Technology

STP9235 Datasheet(HTML) 3 Page - Stanson Technology

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STP9
STP9
STP9
STP92
2
2
235
35
35
35
P Channel Enhancement Mode MOSFET
-
7.5A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STP9235 2009. V1
ELECTRICAL
ELECTRICAL
ELECTRICAL
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS
CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Parameter
Parameter
Parameter
Symbol
Symbol
Symbol
Symbol
Condition
Condition
Condition
Condition
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Max
Max
Max
Max
Unit
Unit
Unit
Unit
Static
Static
Static
Static
Drain-Source
Breakdown Voltage
V(BR)DSS
VGS=0V,ID=-250uA
-25
V
Gate Threshold
Voltage
VGS(th)
VDS=VGS,ID=-250uA
-1.0
-3.0
V
Gate Leakage Current
IGSS
VDS=0V,VGS=±20V
±100
nA
Zero Gate Voltage
Drain Current
IDSS
VDS=-18V,VGS=0V
-1
uA
VDS=-18V,VGS=0V
TJ=85℃
-5
On-State Drain
Current
ID(on)
VDS=-5V,VGS=-4.5V
-10
A
Drain-source On-
Resistance
RDS(on)
VGS=-10V,ID=-7.5A
VGS=-6.0V,ID=-6.0A
VGS=-4.5V,ID=-5.4A
35
45
55
45
55
65
mΩ
Forward
Transconductance
gfs
VDS=-15V,ID=-5.7V
13
S
Diode Forward Voltage
VSD
IS=-2.3A,VGS=0V
-0.8
-1.2
V
Dynamic
Dynamic
Dynamic
Dynamic
Total Gate Charge
Qg
VDS=-15V,VGS=-10V
ID≡-3.5A
16
24
nC
Gate-Source Charge
Qgs
2.3
Gate-Drain Charge
Qgd
4.5
Input Capacitance
Ciss
VDS ==-15V,VGS=0V
f=1MHz
680
pF
Output Capacitance
Coss
120
Reverse
TransferCapacitance
Crss
75
Turn-On Time
td(on)
tr
VDD=-15V,RL=15Ω
ID=-1A,VGEN=-10V
RG=6Ω
14
25
nS
15
26
Turn-Off Time
td(off)
tf
42
70
30
50



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