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S5566N Datasheet(PDF) 1 Page - Shenzhen Taychipst Electronic Co., Ltd

Part # S5566N
Description  SILICON RECTIFIER DIODES
PDF  2 Pages
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Manufacturer  TAYCHIPST [Shenzhen Taychipst Electronic Co., Ltd]
Direct Link  http://www.taychipst.com
Logo TAYCHIPST - Shenzhen Taychipst Electronic Co., Ltd

S5566N Datasheet(HTML) 1 Page - Shenzhen Taychipst Electronic Co., Ltd

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S5566B THRU S5566N
100V-1000V
1.0A
1 of 2
Mechanical Data
Web Site: www.taychipst.com
FEATURES
E-mail: sales@taychipst.com
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
SILICON RECTIFIER DIODES
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 50 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
S5566B
S5566G
S5566J
S5566N
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
100
400
600
1000
V
Maximum RMS voltage
VRMS
70
280
420
700
V
Maximum DC Blocking Voltage
VDC
100
400
600
1000
V
Maximum Average Forward Current
IF(AV)
1.0
A
Maximum Peak Forward Surge Current Single half sine wave
(50Hz)
(60Hz)
(50Hz)
(60Hz)
superimposed on rated load (JEDEC Method)
IFSM
45
49
30
33
A
Maximum Forward Voltage at IF = 1.0 A
VF
1.2
V
Maximum Repetitive Peak Reverse Current
IRRM
10
µA
Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
RATING


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