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CXD1267AN

Switching Characteristics

Item

Propagation delay time

Propagation delay time

Propagation delay time

Propagation delay time

Propagation delay time

Propagation delay time

Rise time

Rise time

Rise time

Fall time

Fall time

Fall time

Charge pump boosting time

Output noise voltage

Output noise voltage

Output noise voltage

Output noise voltage

30

30

30

50

50

50

360

330

30

180

330

24

—

—

—

—

—

50

50

50

80

80

80

600

550

50

300

550

40

—

—

—

—

—

75

75

75

120

120

120

900

770

75

500

770

60

10

0.5

0.5

0.5

0.5

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ns

ms

V

V

V

V

Symbol

Conditions

Min.

Typ.

Max.

Unit

CPP3

= 20V; boosting time after all power supplies rose.

Note) Each item is evaluated by Measurement Circuit.

Notes on Operation (See Application Circuit.)

1. Be sure to protect against static electricity because this IC is MOS structure.

3. To prevent latch-up, use a capacitor of 0.1µF (CP1, CP2) for charge pump.

Insert a silicon diode (D2) between CPP3 and CPP1.

4. In order to protect CCD image sensor, pre-clamp is requested prior to clamp by DCOUT.