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2SC6100 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SC6100 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
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4 / 5 page ![]() 2SC6100 2010-06-22 4 Collector-emitter voltage VCE (V) Safe Operating Area 10 0.01 0.1 1 10 100 0.1 1 IC max (pulsed) ♦ DC operation * (Ta = 25°C) 10 μs♦ 100 μs♦ 1 ms ♦ 100 ms ♦* 10 ms ♦ 10 s ♦* ♦: Single nonrepetitive pulse Ta = 25°C Note that the curves for 100 ms*, 10 s* and DC operation* will be different when the devices aren’t mounted on an FR4 board (glass epoxy, 1.6 mmt thick, Cu area: 645 mm 2). These characteristic curves must be derated linearly with increase in temperature. IC max (continuous) 過渡熱抵抗 rth - tw 1 10 100 1000 0.01 0.1 1 10 100 1000 パルス幅 tw (s) この過渡熱抵抗データは熱抵抗制限領域にだけ適用されます 単発パルス測定 Ta=25℃ ①セラミック基板実装時 (25.4mm×25.4mm×0.8t ,CuPad 645mm 2) ②FR4基板実装時 (25.4mm×25.4mm×1.6t ,ガラスエポキシ ,CuPad 645mm 2) ① ② Transient Thermal Resistance rth – tw Pulse width tw (s) (2) (1) Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C (1)Mounted on ceramic board. (25.4 mm × 25.4 mm × 0.8 mmt Cu Pad: 645 mm2 ) (2)Mounted on an FR4 board (glass epoxy, 1.6 mmt thick, Cu area: 645 mm 2) |
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