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RN2102MFV Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # RN2102MFV
Description  Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
PDF  8 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

RN2102MFV Datasheet(HTML) 2 Page - Toshiba Semiconductor

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RN2101MFV
∼RN2106MFV
2010-04-06
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
ICBO
VCB = −50 V, IE = 0
―
―
−100
Collector cutoff
current
RN2101MFV to
2106MFV
ICEO
―
VCE = −50 V, IB = 0
―
―
−500
nA
RN2101MFV
−0.82
―
−1.52
RN2102MFV
−0.38
―
−0.71
RN2103MFV
−0.17
―
−0.33
RN2104MFV
VEB = −10 V, IC = 0
−0.082
―
−0.15
RN2105MFV
−0.078
―
−0.145
Emitter cutoff current
RN2106MFV
IEBO
―
VEB = −5 V, IC = 0
−0.074
―
−0.138
mA
RN2101MFV
30
―
―
RN2102MFV
50
―
―
RN2103MFV
70
―
―
RN2104MFV
80
―
―
RN2105MFV
80
―
―
DC current gain
RN2106MFV
hFE
―
VCE = −5 V,
IC = −10 mA
80
―
―
―
Collector-emitter
saturation voltage
RN2101MFV to
2106MFV
VCE (sat)
―
IC = −5 mA,
IB = −0.5 mA
―
−0.1
−0.3
V
RN2101MFV
−1.1
―
−2.0
RN2102MFV
−1.2
―
−2.4
RN2103MFV
−1.3
―
−3.0
RN2104MFV
−1.5
―
−5.0
RN2105MFV
−0.6
―
−1.1
Input voltage (ON)
RN2106MFV
VI (ON)
―
VCE = −0.2 V,
IC = −5 mA
−0.7
―
−1.3
V
RN2101MFV to
2104MFV
−1.0
―
−1.5
Input voltage (OFF)
RN2105MFV,
2106MFV
VI (OFF)
―
VCE = −5 V,
IC = −0.1 mA
−0.5
―
−0.8
V
Transition frequency
RN2101MFV to
2106MFV
fT
―
VCE = −10V,
IC = −5mA
―
250
―
MHz
Collector output
capacitance
RN2101MFV to
2106MFV
Cob
―
VCB = −10 V, IE = 0,
f = 1 MHz
―
0.9
―
pF
RN2101MFV
3.29
4.7
6.11
RN2102MFV
7
10
13
RN2103MFV
15.4
22
28.6
RN2104MFV
32.9
47
61.1
RN2105MFV
1.54
2.2
2.86
Input resistor
RN2106MFV
R1
―
3.29
4.7
6.11
kΩ
RN2101MFV to
2104MFV
0.8
1.0
1.2
RN2105MFV
0.0376
0.0468
0.0562
Resistor ratio
RN2106MFV
R1/R2
―
0.08
0.1
0.12
―



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