RN4981FS datasheet(3/7 Pages) TOSHIBA

3 / 7 page

RN4981FS

2007-11-01

Electrical Characteristics (Ta = 25°C) (Q1)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

ICBO

VCB = 20 V, IE = 0

⎯

100

Collector cut-off current

ICEO

VCE = 20 V, IB = 0

⎯

500

Emitter cut-off current

IEBO

VEB = 10 V, IC = 0

0.89

⎯

1.33

DC current gain

hFE

VCE = 5 V, IC = 10 mA

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = 5 mA, IB = 0.25 mA

⎯

0.15

Input voltage (ON)

VI (ON)

VCE = 0.2 V, IC = 5 mA

1.0

⎯

2.0

Input voltage (OFF)

VI (OFF)

VCE = 5 V, IC = 0.1 mA

0.8

⎯

1.5

Collector output capacitance

Cob

VCB = 10 V, IE = 0, f = 1 MHz

⎯

1.2

⎯

Electrical Characteristics (Ta =25°C) (Q2)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

ICBO

VCB = −20 V, IE = 0

⎯

−100

Collector cut-off current

ICEO

VCE = −20 V, IB = 0

⎯

−500

Emitter cut-off current

IEBO

VEB = −10 V, IC = 0

−0.89

⎯

−1.33

DC current gain

hFE

VCE = −5 V, IC = −10 mA

⎯

Collector-emitter saturation voltage

VCE (sat)

IC = −5 mA, IB = −0.25 mA

⎯

−0.15

Input voltage (ON)

VI (ON)

VCE = −0.2 V, IC = −5 mA

−1.0

⎯

−2.0

Input voltage (OFF)

VI (OFF)

VCE = −5 V, IC = −0.1 mA

−0.8

⎯

−1.5

Collector output capacitance

Cob

VCB = −10 V, IE = 0, f = 1 MHz

⎯

1.2

⎯

Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Input resistor

⎯

3.76

4.7

5.64

Resistor ratio

R1/R2

⎯

0.8

1.0

1.2

RN4981FS Datasheet(PDF) 3 Page - Toshiba Semiconductor

RN4981FS Datasheet(HTML) 3 Page - Toshiba Semiconductor

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL