BLV640 datasheet(1/6 Pages) BELLING

Part #	BLV640

Description	N-channel Enhancement Mode Power MOSFET

PDF	6 Pages

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Manufacturer	BELLING [SHANGHAI BELLING CO., LTD.]

Direct Link	http://www.belling.com.cn

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2008.08.08

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BLV640

N-channel Enhancement Mode Power MOSFET

• Avalanche Energy Specified

BVDSS

200V

• Fast Switching

RDS(ON)

0.18

Ω

• Simple Drive Requirements

ID

18A

Description

This advanced low voltage MOSFET is produced

using Belling’s proprietary MOS technology.

Designed for high efficiency switch mode power supply

.

Absolute Maximum Ratings ( T

C=25

oC unless otherwise noted )

Symbol

Parameter

Value

Units

VDS

Drain-Source Voltage

200

V

VGS

Gate-Source Voltage

+ 30

V

Continuous Drain Current

18

A

ID

Continuous Drain Current ( T

C=100

oC)

11

A

IDM

Drain Current (pulsed) (Note 1)

72

A

Power Dissipation

125

W

PD

Linear Derating Factor

1.0

W/

℃

EAS

Single Pulsed Avalanche Energy (Note2)

580

mJ

IAR

Avalanche Current

18

A

EAR

Repetitive Avalanche Energy

13

mJ

Tj

Operating Junction Temperature Range

-55 to +150

oC

TSDG

Storage Temperature Range

-55 to +150

oC

Thermal Characteristics

Symbol

Parameter

Value

Units

Rth j-c

Thermal Resistance, Junction to case

Max.

0.5

℃/ W

Rth j-a

Thermal Resistance, Junction to Ambient

Max.

62.5

℃/ W

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BLV640 Datasheet(PDF) 1 Page - SHANGHAI BELLING CO., LTD.

BLV640 Datasheet(HTML) 1 Page - SHANGHAI BELLING CO., LTD.

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