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BLV740 Datasheet(PDF) 1 Page - SHANGHAI BELLING CO., LTD. |
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BLV740 Datasheet(HTML) 1 Page - SHANGHAI BELLING CO., LTD. |
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1 / 6 page  http://www.belling.com.cn 3/28/2007 Page 1/6 BLV740 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified BVDSS 400V • Fast Switching RDS(ON) 0.55Ω Ω Ω Ω • Simple Drive Requirements ID 10A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply . Absolute Maximum Ratings ( T C=25 oC unless otherwise noted ) Symbol Parameter Value Units VDS Drain-Source Voltage 400 V VGS Gate-Source Voltage + 20 V Continuous Drain Current 10 A ID Continuous Drain Current ( T C=100 oC) 6.3 A IDM Drain Current (pulsed) (Note 1) 40 A Power Dissipation 125 W PD Linear Derating Factor 1.0 W/℃ EAS Single Pulsed Avalanche Energy (Note2) 520 mJ IAR Avalanche Current 10 A EAR Repetitive Avalanche Energy 13 mJ Tj Operating Junction Temperature Range -55 to +150 oC TSDG Storage Temperature Range -55 to +150 oC Thermal Characteristics Symbol Parameter Value Units Rth j-c Thermal Resistance, Junction to case Max. 1.0 ℃/ W Rth j-a Thermal Resistance, Junction to Ambient Max. 62.5 ℃/ W |
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Similar Description - BLV740 |
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