1SS427

2008-01-30

1

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS427

Ultra-High Speed Switching Applications

2-pin compact package: Ideal for high-density mounting

Characteristics

Symbol

Rating

Unit

Maximum (peak) reverse voltage

85

V

Reverse voltage

80

V

Maximum (peak) forward current

200

mA

Average forward current

100

mA

Surge current (10 ms)

1

A

Power dissipation

P

150 *

mW

Junction temperature

150

°C

Storage temperature

−55 to 150

°C

* : Mounted on a glass epoxy circuit board of 20 mm × 20 mm,

Cu pad dimension of 4 mm × 4 mm.

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.62

―

―

―

0.75

―

Forward voltage

―

―

0.98

1.20

V

―

―

―

0.1

Reverse current

―

―

―

0.5

μA

Total capacitance

―

―

0.5

―

pF

Reverse recovery time

―

―

1.6

―

ns

0.6±0.05

0.2

±0.05

A

A

-0.03

0.1±0.05

JEDEC

―

JEITA

―

TOSHIBA

1-1L1A

Weight: 0.6 mg (typ.)

Unit: mm

fSC