CUS08F30 datasheet(2/5 Pages) TOSHIBA

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CUS08F30

5. Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, T

Electrical Characteristics (Unless otherwise specified, Taaaa = 25

= 25

= 25



))))

Characteristics

Forward voltage

Reverse current

Total capacitance

Symbol

VF(1)

VF(2)

VF(3)

IR(1)

Note



Test Condition

IF = 10 mA

IF = 100 mA

IF = 800 mA

VR = 30 V

VR = 0 V, f = 1 MHz

Min



Typ.

0.22

0.28

0.40



170

Max



0.45



Unit

µA

6. Marking

Marking

Fig.

Fig. 6.1

6.1

6.1 Marking

Marking

Marking Code

Part Number

CUS08F30

7. Usage Considerations

Usage Considerations

•

Schottky barrier diodes (SBDs) have reverse leakage greater than other types of diodes. This makes SBDs

more susceptible to thermal runaway under high-temperature and high-voltage conditions. Thus, both

forward and reverse power losses of SBDs should be considered for thermal and safety design.

8. Land Pattern Dimensions for Reference Only

Land Pattern Dimensions for Reference Only

Fig.

Fig. 8.1

8.1

8.1 Land Pattern Dimensions for Reference Only (Unit: mm)

Land Pattern Dimensions for Reference Only (Unit: mm)

2012-06-12

Rev.4.0

CUS08F30 Datasheet(PDF) 2 Page - Toshiba Semiconductor

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