SSM5H06FE

2007-11-01

1

Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode

SSM5H06FE

DC-DC Converter

• Combined Nch MOSFET and Schottky Diode in one Package.

• Small package

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

20

V

Gate-Source voltage

±10

V

DC

100

Drain current

Pulse

200

mA

Drain power dissipation

150

mW

Channel temperature

150

°C

DIODE

Characteristics

Symbol

Rating

Unit

Maximum (peak) reverse voltage

15

V

Reverse voltage

12

V

Average forward current

100

mA

Peak one cycle surge forward current

(non-repetitive)

1 (50 Hz)

A

Junction temperature

125

°C

DIODE COMMON

Characteristics

Symbol

Rating

Unit

Storage temperature

−55~125

°C

Operating temperature

(Note 3)

−40~100

°C

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Mounted on FR4 board

(25.4 mm

× 25.4 mm × 1.6 t, Cu Pad: 0.135 mm

Note 2: The pulse width limited by max channel temperature.

Note 3: Operating temperature limited by max channel temperature and max junction temperature.

Unit: mm

1.2±0.05

1.6±0.05

1

2

3

5

4

ESV

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-2P1C

Weight: 3 mg (typ.)

1.Gate

2.Source

3.Anode

4.Cathode

5.Drain

0.3 mm