TSM8N80 datasheet(2/10 Pages) TSC

2 / 10 page

TSM8N80

800V N-Channel Power MOSFET

2/10

Version: A12

Thermal Performance

Parameter

Symbol

TO-220

ITO-220

Unit

Thermal Resistance - Junction to Case

RӨJC

0.5

3.1

oC/W

Thermal Resistance - Junction to Ambient

RӨJA

62.5

Notes: Surface mounted on FR4 board t ≤ 10sec

Electrical Specifications (Tc = 25

oC unless otherwise noted)

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250uA

BVDSS

800

Drain-Source On-State Resistance

VGS = 10V, ID = 4.0A

RDS(ON)

1.1

1.4

Ω

Gate Threshold Voltage

VDS = VGS, ID = 250uA

VGS(TH)

2.0

4.0

Zero Gate Voltage Drain Current

VDS = 800V, VGS = 0V

IDSS

Gate Body Leakage

VGS = ±30V, VDS = 0V

IGSS

±100

Forward Transconductance

VDS = 30V, ID = 4.0A

gfs

Diode Forward Voltage

IS = 8A, VGS = 0V

VSD

1.5

Dynamic

Total Gate Charge

VDS = 640V, ID = 8A,

VGS = 10V

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Input Capacitance

VDS = 25V, VGS = 0V,

f = 1.0MHz

Ciss

1921

Output Capacitance

Coss

146

Reverse Transfer Capacitance

Crss

Switching

Turn-On Delay Time

VGS = 10V, ID = 8A,

VDD = 400V, RG = 25Ω

td(on)

133

Turn-On Rise Time

Turn-Off Delay Time

td(off)

172

Turn-Off Fall Time

Reverse Recovery Time

VGS = 0V, IS = 8A,

dIF/dt = 100A/us

tfr

479

Reverse Recovery Charge

Qfr

5.5

Notes:

Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

VDD = 50V, IAS=8A, L=5.9mH, RG=25Ω, Starting TJ=25℃

ISD ≤8A, di/dt ≤ 200A/uS, Vdd ≤ BV, Starting TJ=25℃

Pulse test: pulse width ≤300uS, duty cycle ≤2%

b For design reference only, not subject to production testing.

c Switching time is essentially independent of operating temperature.

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