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ASW216 Datasheet(PDF) 3 Page - Advanced Semiconductor Business Inc. |
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ASW216 Datasheet(HTML) 3 Page - Advanced Semiconductor Business Inc. |
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3 / 5 page ![]() 3/5 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 February 2010 ASW216 5-4000 MHz MMIC Amplifier 1) OIP3 is measured with two tones at an output power of +5 dBm/tone(at 4.5V) / -5 dBm/tone(at 3V) separated by 1 MHz. Board Layout (FR4, 40x40 mm 2, 0.8T) S-parameters & K-factor APPLICATION CIRCUIT Frequency (MHz) 900 2000 900 2000 Magnitude S21 (dB) 14 11.8 13 11 Magnitude S11 (dB) -14 -14 -12 -10 Magnitude S22 (dB) -15 -14 -15 -12 Output P1dB (dBm) 20 20 16 15 Output IP3 1) (dBm) 37.5 38 23 24 Noise Figure (dB) 2.2 2.4 2.2 2.4 Device Voltage (V) 4.5 3 Current (mA) 80 35 500 ~ 3500 MHz +4.5 V / +3 V Schematic 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 Frequency (MHz) C1=100 pF L1=39 nH C2=100 pF Vcc=4.5 V RF IN RF OUT C3=100 pF C4=1 mF ASW216 D1=5.6V Zener Diode L2=39 nH 0 500 1000 1500 2000 2500 3000 3500 0 5 10 15 20 Frequency (MHz) -40 oc 25 oc 85 oc 0 500 1000 1500 2000 2500 3000 3500 -20 -15 -10 -5 0 Frequency (MHz) -40 oc 25 oc 85 oc 0 500 1000 1500 2000 2500 3000 3500 -25 -20 -15 -10 -5 0 Frequency (MHz) -40 oc 25 oc 85 oc |
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