2N3019HR datasheet(1/9 Pages) STMICROELECTRONICS

Part #	2N3019HR

Description	Hi-Rel NPN bipolar transistor 80 V, 1 A

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 9 page

This is information on a product in full production.

October 2012

Doc ID 15384 Rev 3

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9

2N3019HR

Hi-Rel NPN bipolar transistor 80 V, 1 A

Datasheet — production data

Features

■ Hi-Rel NPN bipolar transistor

■ Linear gain characteristics

■ ESCC qualified

■ European preferred part list - EPPL

■ Radiation level: lot specific total dose contact

marketing for specified level

Description

The 2N3019HR is a silicon planar epitaxial NPN

transistor in a TO-39 package. It is specifically

designed for aerospace Hi-Rel applications, and

ESCC qualified in accordance with the 5201-003

specification. In case of discrepancies between

this datasheet and ESCC detailed specification,

the latter prevails.

Figure 1.

Internal schematic diagram

BVCEO

80 V

IC (max)

1 A

HFE at 10 V - 150 mA

> 100

Operating temperature range

-65°C to +200°C

TO-39

Table 1.

Device summary

Order codes

Package

Lead finish

Marking

Type

EPPL

Packaging

2N3019HR

TO-39

Gold

Solder Dip

520101103

520101104

ESCC Flight

Yes

Strip pack

www.st.com

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