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ACE3400B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE3400B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page  ACE3400B N-Channel Enhancement Mode MOSFET VER 1.2 1 Description The ACE3400BBM+ uses advanced trench technology to provide excellent RDS(ON) and low gate charge low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features V DS 30V R DS(ON) @VGS=10V, IDS=5.2A, Typ 24mΩ R DS(ON) @VGS=4.5V, IDS=5A, Typ 27mΩ Fast switching speed Low threshold voltage (0.8V) makes this device ideal for portable equipment Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±12 V Drain Current Continuous (Note 1) ID 5.2 A Pulsed (Note 2) IDM 30 Power Dissipation (Note 1) PD 1 W Operating and storage junction temperature range TJ,TSTG -55~+150 ℃ Packaging Type SOT-23-3L 3 1 2 SOT-23-3L Description Function 1 G Gate 2 S Source 3 D Drain |
Similar Part No. - ACE3400B |
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Similar Description - ACE3400B |
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