TDA7492P datasheet(9/26 Pages) STMICROELECTRONICS

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TDA7492P

Electrical specifications

Doc ID 15068 Rev 5

9/26

VOVP

Overvoltage protection threshold -

VUVP

Undervoltage protection

threshold

--7

RdsON

Power transistor on resistance

High side

0.2

Low side

0.2

Output power

THD = 10%

THD = 1%

Output power

VCC = 12 V, THD = 10%

9.5

VCC = 12 V, THD = 1%

7.2

Power dissipated by device

Po = 25 W + 25 W,

THD = 10%

-5.0

-W

Efficiency

Po = 10 W + 10 W

THD

Total harmonic distortion

Po = 1 W

0.1

0.4

Closed-loop gain

GAIN0 = L, GAIN1 = L

20.6

21.6

22.6

GAIN0 = L, GAIN1 = H

26.6

27.6

28.6

GAIN0 = H, GAIN1 = L

30.1

31.1

32.1

GAIN0 = H, GAIN1 = H

32.6

33.6

34.6

ΔGV

Gain matching

±1

Cross talk

f = 1 kHz

Total input noise

A Curve, GV = 20 dB

µV

f = 22 Hz to 22 kHz

SVRR

Supply voltage rejection ratio

fr = 100 Hz, Vr = 0.5 V,

CSVR = 10 µF

Tr, Tf

Rise and fall times

fSW

Switching frequency

Internal oscillator

290

310

330

kHz

fSWR

Output switching frequency

range

With internal oscillator (1)

250

400

kHz

With external oscillator (2) 250

400

VinH

Digital input high (H)

2.3

VinL

Digital input low (L)

0.8

AMUTE

Mute attenuation

VMUTE = 1 V

fSW = 10

6 / ((16 * R

OSC + 182) * 4) kHz, fSYNCLK = 2 * fSW with R3 = 39 kΩ, see Figure 20.

fSW = fSYNCLK / 2 with the frequency of the external oscillator.

Table 5.

Electrical specifications (continued)

Symbol

Parameter

Condition

Min

Typ

Max

Unit

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