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M48T08Y Datasheet(PDF) 9 Page - STMicroelectronics

Part # M48T08Y
Description  5 V, 64 Kbit (8 Kb x 8) TIMEKEEPER® SRAM
PDF  31 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M48T08Y Datasheet(HTML) 9 Page - STMicroelectronics

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M48T08, M48T08Y, M48T18
Operation modes
Doc ID 2411 Rev 11
9/31
2.1
READ mode
The M48T08/18/08Y is in the READ mode whenever W (WRITE enable) is high, E1 (chip
enable 1) is low, and E2 (chip enable 2) is high. The device architecture allows ripple-
through access of data from eight of 65,536 locations in the static storage array. Thus, the
unique address specified by the 13 address inputs defines which one of the 8,192 bytes of
data is to be accessed. Valid data will be available at the data I/O pins within address access
time (tAVQV) after the last address input signal is stable, providing that the E1, E2, and G
access times are also satisfied. If the E1, E2 and G access times are not met, valid data will
be available after the latter of the chip enable access times (tE1LQV or tE2HQV) or output
enable access time (tGLQV).
The state of the eight three-state data I/O signals is controlled by E1, E2 and G. If the
outputs are activated before tAVQV, the data lines will be driven to an indeterminate state
until tAVQV. If the address inputs are changed while E1, E2 and G remain active, output data
will remain valid for output data hold time (tAXQX) but will go indeterminate until the next
address access.
Figure 5.
READ mode AC waveforms
Note:
WRITE enable (W) = high.
AI00962
tAVAV
tAVQV
tAXQX
tE1LQV
tE1LQX
tE1HQZ
tGLQV
tGLQX
tGHQZ
VALID
A0-A12
E1
G
DQ0-DQ7
tE2HQV
tE2HQX
VALID
tE2LQZ
E2



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