Characteristics

STPS41L60C

2/9

Doc ID 8616 Rev 6

1

Characteristics

When the diodes 1 and 2 are used simultaneously :

To evaluate the conduction losses use the following equation:

2

(RMS)

Table 2.

Absolute ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

60

V

30

A

Average forward current

δ = 0.5

Per diode

Per device

20

40

A

Surge non repetitive forward current

tp = 10 ms Sinusoidal

220

A

(1)

Repetitive peak avalanche power

9500

W

80

V

(2)

80

V

Storage temperature range

-65 to + 175

°C

150

°C

1.

For temperature or pulse time duration deratings, refer to Figure 4 and Figure 5. More details regarding the avalanche

energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.

2.

Refer to Figure 12

3.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

---------------

1

Rth j

a

–

()

--------------------------

<

Table 3.

Thermal resistances

Symbol

Parameter

Value

Unit

Junction to case

Per diode

Total

1.5

0.8

° C/W

Coupling

0.1

Table 4.

Static electrical characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

600

100

175

mA

(1)

Forward voltage drop

0.60

V

0.50

0.58

0.77

0.67

0.71

1.