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STPS1150 Datasheet(PDF) 2 Page - STMicroelectronics

Part # STPS1150
Description  Power Schottky rectifier
PDF  11 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPS1150 Datasheet(HTML) 2 Page - STMicroelectronics

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Characteristics
STPS1150
2/11
Doc ID 9472 Rev 5
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.59 x IF(AV) + 0.08 IF
2
(RMS)
Table 2.
Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
150
V
IF(RMS)
Forward rms current
15
A
IF(AV)
Average forward current
STmite/flat Tc = 160 °C δ = 0.5
1
A
SMA
TL = 160 °C δ = 0.5
DO-41
TL = 150 °C δ = 0.5
IFSM
Surge non repetitive forward
current
STmite/flat
tp = 10 ms sinusoidal
50
A
SMA
50
DO-41
75
PARM
Repetitive peak avalanche power
tp = 1µs Tj = 25 °C
1500
W
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature(1)
175
°C
1.
condition to avoid runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j
a
–
()
--------------------------
<
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
STmite/STmite flat
20
°C/W
Rth(j-l)
Junction to lead
SMA
20
Lead length = 10 mm
DO-41
30
Table 4.
Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
0.2
1.0
µA
Tj = 125 °C
0.2
1.0
mA
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 1 A
0.78
0.82
V
Tj = 125 °C
0.62
0.67
Tj = 25 °C
IF = 2 A
0.85
0.89
Tj = 125 °C
0.69
0.75
1.
tp = 5 ms, δ < 2%
2.
tp = 380 µs, δ < 2%



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