STPS8170DEE datasheet(3/8 Pages) STMICROELECTRONICS

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STPS8170DEE

Characteristics

Doc ID 023260 Rev 1

3/8

Figure 1.

Average forward power dissipation

versus average forward current

Figure 2.

Average forward current versus

ambient temperature(

 = 0.5)

PF(AV)(W)

012

3456

IF(AV)(A)

δ =tp/T

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

IF(AV)(A)

100

125

150

175

δ =tp/T

Tamb(°C)

Rth(j-a)=Rth(j-c)

Figure 3.

Normalized avalanche power

derating versus pulse duration

Figure 4.

Relative variation of thermal

impedance junction to case versus

pulse duration

P(tp)

(10 µs)

ARM

0.001

0.01

0.1

100

1000

t (µs)

Zth(j-c)/Rth(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

tp(s)

Single pulse

Figure 5.

Reverse leakage current versus

reverse voltage applied (typical

values)

Figure 6.

Junction capacitance versus

reverse voltage applied (typical

values)

1.E-05

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

100

120

140

160

180

VR(V)

Tj = 150 °C

Tj = 125 °C

Tj = 100 °C

Tj = 75 °C

Tj = 50 °C

Tj = 25 °C

IR(mA)

C(pF)

100

1000

100

1000

F=1 MHz

VOSC=30 mVRMS

Tj =25 °C

VR(V)

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