UFP254

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

VER.a

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

250

V

Gate-Source Voltage

±20

V

Continuous

23

A

Drain Current

Pulsed

92

A

Avalanche Current

23

A

Single Pulsed

410

mJ

Avalanche Energy

Repetitive

19

mJ

Power Dissipation

42

W

Junction Temperature

+150

°C

Storage Temperature Range

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

250

V

Drain-Source Leakage Current

25

μA

Forward

+100 nA

Gate-Source Leakage Current

Reverse

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2

4

V

Static Drain-Source On-State Resistance

140 mΩ

DYNAMIC PARAMETERS

Input Capacitance

2700

pF

Output Capacitance

620

pF

Reverse Transfer Capacitance

180

pF

SWITCHING PARAMETERS

Total Gate Charge

140

nC

Gate to Source Charge

24

nC

Gate to Drain Charge

71

nC

Turn-ON Delay Time

15

ns

Rise Time

63

ns

Turn-OFF Delay Time

74

ns

Fall-Time

50

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

23

A

Maximum Body-Diode Pulsed Current

92

A

Drain-Source Diode Forward Voltage

1.8

V