HT32F1253_12 datasheet(28/35 Pages) HOLTEK

28 / 35 page

Rev. 1.10

�8 of �5

��i� 1�� 01�

��-bit �RM Co�tex™-M� MCU

HT��F1�51/51B/5�/5�

ADC Characteristics

Table 15. ADC Characteristics

T� = �5°C, unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDD�

O�e�ating Vo�tage

�.7

�.�

�.6

V�DCIN

�/D Conve�te� In�ut

vo�tage Range

—

VDD�

I�DC

Cu��ent Consum�tion

VDD� = �.�V

—

TBD

m�

I�DC_DN

Powe� Down cu��ent

Consum�tion

VDD� = �.�V

—

u�

f�DC

�/D Conve�te� C�ock

0.7

—

MHz

Sam��ing Rate

0.05

—

MHz

f�DCCONV

�/D Conve�te�

Conve�sion Time

—

t�DC

In�ut Sam��ing Switch

Resistance

—

kΩ

In�ut Sam��ing

Ca�acitance

No �in/�ad ca�acitance inc�uded

—

�F

tSU

Sta�tu� Time

—

�/D Conve�te�

Reso�ution

—

1�

—

bits

INL

Integ�a� Non-�inea�ity

e��o�

fS = 1MHz� VDD� = �.�V

-—

±�

±5

LSB

DNL

Diffe�entia� Non-�inea�ity

e��o�

fS = 1MHz� VDD� = �.�V

—

±1

LSB

Offset E��o�

—

±10

LSB

Gain E��o�

—

±10

LSB

NOTES: 1. Gua�anteed by design� not tested in ��oduction.

2. The figu�e be�ow shows the equiva�ent ci�cuit of the �/D Conve�te� Sam��e-and-Ho�d in�ut stage

whe�e CI is the sto�age ca�acito�� RI is the �esistance of the sam��ing switch and RS is the out�ut

im�edance of the signa� sou�ce VS. No�ma��y the sam��ing �hase du�ation is a��oximate�y� 1.5/f�DC.

The ca�acitance� CI� must be cha�ged within this time f�ame and it must be ensu�ed that the vo�tage

at its terminals becomes sufficiently close to VS fo� accu�acy. To gua�antee this� RS may not have an

a�bit�a�i�y �a�ge va�ue.

SAR ADC

sample

Figure 6. ADC Sampling Network Model

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