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ENA2139 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ENA2139 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 11 page ![]() STK672-110-SL-E No. A2139-2/11 Specifications Absolute Maximum Ratings at Tc = 25 °C Parameter Symbol Conditions Ratings unit Maximum supply voltage 1 VCC max No signal 52 V Maximum supply voltage 2 VDD max No signal -0.3 to +7.0 V Input voltage VIN max Logic input pins -0.3 to +7.0 V Output current IOH max 10 μA 1 pulse (resistance load) 2.65 A Repeated avalanche capacity Ear max 28 mJ Allowable power dissipation Pd max With an arbitrarily large heat sink. Per MOSFET 6.5 W Operating substrate temperature Tc max 105 °C Junction temperature Tj max 150 °C Storage temperature Tstg -40 to +125 °C Allowable Operating Ranges at Ta=25 °C Parameter Symbol Conditions Ratings unit Operating supply voltage 1 VCC With signals applied 10 to 42 V Operating supply voltage 2 VDD With signals applied 5 ±5% V Input high voltage VIH Pin 8, 9, 10, 11 and 12 0 to VDD V Output current 1 IOH1 Tc=105 °C, CLOCK≥200Hz 1.8 A Output current 2 IOH2 Tc=80 °C, CLOCK≥200Hz, See the motor current (IOH) derating curve 2.1 A CLOCK frequency fCL Minimum pulse width: 20 μs 0 to 25 kHz Phase driver withstand voltage VDSS ID=1mA (Tc=25°C) 100min V Electrical Characteristics at Tc=25 °C, VCC=24V, VDD=5.0V Parameter Symbol Conditions min typ max unit VDD supply current ICCO CLOCK=GND 2.6 6 mA Output average current Ioave With R/L = 3 Ω/3.8mH in each phase Vref = 0.176V 0.41 0.45 0.50 A FET diode forward voltage Vdf If=1A (RL=23Ω) 1.2 1.8 V Output saturation voltage Vsat RL=23Ω 0.73 1.02 V High-level input voltage VIH Pins 6 to 9 (4 pins) 4.0 V Low-level input voltage VIL Pins 6 to 9 (4 pins) 1.0 V Input current IIL With pins 6 to 9 at the ground level. Pull-up resistance: 40k Ω (typical) 62 125 250 μA Vref input voltage VrH Pin 12 0 3.5 V Vref input bias current IIB With pin 12 at 1V 50 500 nA Notes: A fixed-voltage power supply must be used. |
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