NXP Semiconductors

PMT760EN

100 V N-channel Trench MOSFET

PMT760EN

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Product data sheet

25 October 2012

2 / 13

2. Pinning information

Table 2.

Pinning information

Pin

Symbol Description

Simplified outline

Graphic symbol

1

G

gate

2

D

drain

3

S

source

4

D

drain

1

3

2

4

SC-73 (SOT223)

S

D

G

017aaa253

3. Ordering information

Table 3.

Ordering information

Package

Type number

Name

Description

Version

PMT760EN

SC-73

plastic surface-mounted package with increased heatsink; 4

leads

SOT223

4. Marking

Table 4.

Marking codes

Type number

Marking code

PMT760EN

T760EN

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

100

V

gate-source voltage

-20

20

V

[1]

-

1.3

A

[1]

-

0.9

A

drain current

[1]

-

0.6

A

peak drain current

-

5.1

A

[2]

-

800

mW

[1]

-

1700

mW

total power dissipation

-

6200

mW

junction temperature

-55

150

°C