2N1893 datasheet(2/3 Pages) COMSET

2 / 3 page

NPN 2N1893

11/09/2012

COMSET SEMICONDUCTORS

3/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Max

Unit

ICBO

Collector Cutoff Current

VCB= 90 V

IE= 0

Tamb= 25°C

Tamb= 150°C

µA

IEBO

Emitter Cutoff Current

VEB= 5 V, IB= 0

VCBO

Collector Base

Sustaining Voltage

IC= 100 mA, IE= 0

120

VCEO

Collector Emitter

Sustaining Voltage (*)

IC= 10 mA, IB= 0

VCER

Collector Base

Breakdown Voltage (*)

IC= 10 mA, RBE = 10 Ω

100

VEBO

Emitter Base

Breakdown Voltage

IE= 100 µA, IC= 0

hFE

DC Current Gain (*)

IC= 0.1 mA, VCE= 10 V

IC= 10 mA

VCE= 10 V

Tamb= 25°C

Tamb= -55°C

IC= 150 mA, VCE= 10 V

120

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= 50 mA, IB= 5 mA

0.9

IC= 150 mA, IB= 15 mA

0.5

VBE(SAT)

Base-Emitter saturation

Voltage (*)

IC= 50 mA, IB= 5 mA

1.2

IC= 150 mA, IB= 15 mA

1.3

Transition Frequency

IC= 50 mA, VCE= 10 V

f= 20 MHz

MHz

Collector Capacitance

IE= ie = 0 ,VCB= 10 V

f = 1MHz

Base Capacitance

IC= ic = 0 ,VEB= 0.5 V

f = 1MHz

(*) Pulse conditions : tp < 300

µs, δ =2%.

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