2N3110 datasheet(2/3 Pages) COMSET

2 / 3 page

N 2N3108 – 2N3110

08/08/2012

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector Cutoff Current

VCB = 60 V, IE = 0

Tamb = 150°C

µA

ICES

Collector Cutoff Current

VCE = 60 V, VBE = 0

IEBO

Emitter Cutoff Current

VBE = 5.0 V, IC = 0

VCBO

Collector-Base

Breakdown Voltage

IC = 100 µA, IE = 0

2N3108

100

2N3110

VCEO

Collector-emitter

Breakdown Voltage

IC = 30 mA, IB = 0

2N3108

2N3110

VEBO

Emitter-Base Breakdown

Voltage

IE = 100 µA, IC = 0

VCE(SAT)

Collector-Emitter

saturation Voltage

IC = 150 mA, IB = 15 mA

0.25

IC = 1 A, IB = 100 mA

VBE(SAT)

Base-Emitter saturation

Voltage

IC = 150 mA, IB = 15 mA

1.1

IC = 1 A, IB = 100 mA

hFE

DC Current Gain

IC = 150 mA, VCE = 1 V

120

IC = 0.1 mA, VCE = 10 V

IC = 500 mA, VCE = 10 V

IC = 150 mA, VCE = 10 V

Tamb = -55°C

Transition frequency

IC = 50 mA, VCE = 10 V

f = 20MHz

MHz

CEBO

Emitter-Base

Capacitance

IC = 0, VEB = 0.5 V

f = 1MHz

CCBO

Collector-Base

Capacitance

IE = ie =0, VCB = 10 V

f = 1MHz

2N3108

2N3110

SWITCHING TIMES

Symbol

Ratings

Value

Unit

ton

Turn-on time

IC = 150 mA; IB1 = 7.5 mA,

VCC = 20 V

200

toff

Turn-off time

IC = 150 mA

IB1 = -IB2 = 7.5 mA

VCC = 20 V

600

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