2N3636 datasheet(2/3 Pages) COMSET

2 / 3 page

PNP 2N3636 – 2N3637

21/09/2012

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

hFE

DC Current Gain (*)

IC = -0.1 mA

VCE = -10 V

2N3636

2N3637

IC = -1 mA

VCE = -10 V

2N3636

2N3637

IC = -10 mA

VCE = -10 V

2N3636

2N3637

100

IC = -50 mA

VCE = -10 V

2N3636

150

2N3637

100

300

IC = -150 mA

VCE = -10 V

2N3636

2N3637

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC = -10 mA, IB = -1 mA

0.3

IC = -50 mA, IB = -5 mA

0.5

VBE(SAT)

Base-Emitter

saturation Voltage (*)

IC = -10 mA, IB = -1 mA

0.8

IC = -50 mA, IB = -5 mA

0.9

Transition frequency

IC = -30 mA, VCE = -30 V

f = 100 MHz

2N3636

150

MHz

2N3637

200

Cob

Output Capacitance

IE = 0, VCB = -20 V, f = 100 kHz

Cib

Input Capacitance

IC = 0, VEB = -1 V, f = 100 kHz

SWITCHING TIMES

Symbol

Ratings

Value

Unit

ton

Turn-on time

IC = -50 mA, IB1 = -IB2 = -5 mA

VCC = 100 V, CBE = 4 V

400

toff

Turn-off time

600

(*) Pulse conditions : tp < 300

µs, δ =1.5%

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