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2N5679 Datasheet(PDF) 1 Page - Comset Semiconductor |
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2N5679 Datasheet(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page ![]() 2N5679 – 2N5680 COMSET SEMICONDUCTORS 1/3 P PN NP P S SW WIIT TC CH HIIN NG G T TR RA AN NS SIIS ST TO OR RS S The 2N5679 and 2N5680 are silicon expitaxial planar PNP transistors in jedec TO-39 metal case. They are intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit. The complementary NPN types are the 2N5681 and 2N5682 . Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 25679 2N5680 VCEO Collector-Emitter Voltage IB =0 -100 -120 V VCBO Collector-Base Voltage IE =0 -100 -120 V VEBO Emitter-Base Voltage IC =0 -4 V IC Collector Current -1 A IB Base Current -500 mA PD Total Power Dissipation Tamb = 25°C 1 W Tcase = 25°C 10 TJ Junction Temperature 200 °C TStg Storage Temperature range -65 to +150 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction to ambient 175 °C/W RthJ-c Thermal Resistance, Junction to case 17.5 °C/W B C E |
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