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BD433 Datasheet(PDF) 2 Page - Comset Semiconductor |
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BD433 Datasheet(HTML) 2 Page - Comset Semiconductor |
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2 / 3 page ![]() NPN BD433 – BD435 – BD437 25/09/2012 COMSET SEMICONDUCTORS 2 | 3 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector cut-off current IE= 0, VCB= 22 V BD433 - - 100 µA IE= 0, VCB= 32 V BD435 IE= 0, VCB= 45 V BD437 ICES Collector cut-off current VBE= 0, VCE= 22 V BD433 - - 100 VBE= 0, VCE= 32 V BD435 VBE= 0, VCE= 45 V BD437 IEBO Emitter cut-offcurrent IC= 0 VEB= 5 V BD433 - - 1 mA BD435 BD437 VCEO(SUS) Collector-Emitter sustaning Voltage (*) IB= 0 IC= 100 mA BD433 22 - - V BD435 32 - - BD437 45 - - VCE(SAT) Collector-Emitter saturation Voltage (*) IC= 2 A IB= 200 mA BD433 - - 0.5 V BD435 BD437 0.6 VBE Base-Emitter Voltage(*) IC= 2 A VCE= 1 V BD433 - - 1.1 V BD435 BD437 1.2 hFE DC Current Gain (*) IC= 10 mA VCE= 5 V BD433 40 - 130 - BD435 BD437 30 - 130 IC= 500 mA VCE= 1 V BD433 85 - 140 BD435 BD437 IC= 2 A VCE= 1 V BD433 50 - - BD435 BD437 40 - - fT Transition frequency IC= 250 mA VCE= 1 V BD433 3 - - MHz BD435 BD437 1. Measured under pulse conditions :tP <300µs, δ <1.5 |
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