BD439 datasheet(2/3 Pages) COMSET

2 / 3 page

BD439 – BD441

25/09/2012

COMSET SEMICONDUCTORS

2 | 2

27/08/2012

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector cut-off current

IE= 0, VCB= 60 V

BD439

100

µA

IE= 0, VCB= 80 V

BD441

ICES

Collector cut-off current

VBE= 0, VCE= 60 V

BD439

100

VBE= 0, VCE= 80 V

BD441

IEBO

Emitter cut-offcurrent

IC= 0

VEB= 5 V

BD439

BD441

VCEO(SUS)

Collector-Emitter

sustaning Voltage (*)

IB= 0

IC= 100 mA

BD439

BD441

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= 2 A

IB= 200 mA

BD439

0.8

BD441

VBE

Base-Emitter Voltage(*)

IC= 10 mA

VCE= 5 V

BD439

0.58

BD441

IC= 2 A

VCE= 1 V

BD439

1.5

BD441

hFE

DC Current Gain (*)

IC= 10 mA

VCE= 5 V

BD439

130

BD441

130

IC= 500 mA

VCE= 1 V

BD439

140

BD441

IC= 2 A

VCE= 1 V

BD439

BD441

Transition frequency

IC= 250 mA

VCE= 1 V

BD439

MHz

BD441

(*) Measured under pulse conditions :tP <300µs, δ <1.5%

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