BD438 datasheet(2/3 Pages) COMSET

2 / 3 page

BD434 – BD436 – BD438

25/09/2012

COMSET SEMICONDUCTORS

2 | 3

27/08/2012

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector cut-off

current

IE= 0, VCB= -22 V

BD434

-100

µA

IE= 0, VCB= -32 V

BD436

IE= 0, VCB= -45 V

BD438

ICES

Collector cut-off

current

VBE= 0, VCE= -22 V

BD434

-100

VBE= 0, VCE= -32 V

BD436

VBE= 0, VCE= -45 V

BD438

IEBO

Emitter cut-offcurrent

IC= 0

VEB= -5 V

BD434

-1

BD436

BD438

VCEO(SUS)

Collector-Emitter

sustaning Voltage (*)

IB= 0

IC= -100 mA

BD434

-22

BD436

-32

BD438

-45

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= -2 A

IB= -200 mA

BD434

-0.5

BD436

BD438

-0.6

VBE

Base-Emitter

Voltage(*)

IC= -2 A

VCE= -1 V

BD434

-1.1

BD436

BD438

-1.2

hFE

DC Current Gain (*)

IC= -10 mA

VCE= -5 V

BD434

130

BD436

BD438

130

IC= -500 mA

VCE= -1 V

BD434

140

BD436

BD438

IC= -2 A

VCE= -1 V

BD434

BD436

BD438

Transition frequency

IC= -250 mA

VCE= -1 V

BD434

MHz

BD436

BD438

Measured under pulse conditions :tP <300µs, δ <1.5

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