BD440 datasheet(2/3 Pages) COMSET

2 / 3 page

BD440 – BD442

25/09/2012

COMSET SEMICONDUCTORS

2 | 3

27/08/2012

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector cut-off current

IE= 0, VCB= -60 V

BD440

-100

µA

IE= 0, VCB= -80 V

BD442

ICES

Collector cut-off current

VBE= 0, VCE= -60 V

BD440

-100

VBE= 0, VCE= -80 V

BD442

IEBO

Emitter cut-offcurrent

IC= 0

VEB= -5 V

BD440

-1

BD442

VCEO(SUS)

Collector-Emitter

sustaning Voltage (*)

IB= 0

IC= -100 mA

BD440

-60

BD442

-80

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= -2 A

IB= -200 mA

BD440

-0.8

BD442

VBE

Base-Emitter Voltage(*)

IC= -10 mA

VCE= -5 V

BD440

-0.58

BD442

IC= -2 A

VCE= -1 V

BD440

-1.5

BD442

hFE

DC Current Gain (*)

IC= -10 mA

VCE= -5 V

BD440

130

BD442

130

IC= -500 mA

VCE= -1 V

BD440

140

BD442

IC= -2 A

VCE= -1 V

BD440

BD442

Transition frequency

IC= -250 mA

VCE= -1 V

BD440

MHz

BD442

(*) Measured under pulse conditions :tP <300µs, δ <1.5%

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