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BD912 Datasheet(PDF) 1 Page - Comset Semiconductor |
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BD912 Datasheet(HTML) 1 Page - Comset Semiconductor |
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1 / 3 page ![]() PNP BD912 COMSET SEMICONDUCTORS 1/3 P PO OW WE ER R L LIIN NE EA AR R A AN ND D S SW WIIT TC CH HIIN NG G A AP PP PL LIIC CA AT TIIO ON NS S.. The BD912 are PNP transistors mounted in Jedec TO-220 plastic package. They are intended for use in power linear and switching applications. NPN complements are BD911. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage -100 V VCBO Collector-Base Voltage -100 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -15 A IE Emitter Current -15 A IB Base Current -5 A PD Total Device Dissipation @ TC = 25° 90 W TJ Junction Temperature 150 °C TStg Storage Temperature range -65 to +150 °C THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-case Thermal Resistance, Junction - Case 70 K/W |
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Similar Description - BD912 |
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