BDV64 datasheet(3/4 Pages) COMSET

3 / 4 page

BDV64-A-B-C

26/09/2012

COMSET SEMICONDUCTORS

3/4

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICEO

Collector Cutoff

Current

VCE= -30 V, IB= 0

BDV64

-2

VCE= -40 V, IB= 0

BDV64A

VCE= -50 V, IB= 0

BDV64B

VCE= -60 V, IB= 0

BDV64C

IEBO

Emitter Cutoff Current

VBE= -5 V, IC= 0

BDV64

-5

BDV64A

BDV64B

BDV64C

ICBO

Collector Cutoff

Current

IE= 0

Tj=25°C

VCB= -60 V

BDV64

-0.4

VCB= -80 V

BDV64A

VCB= -100 V

BDV64B

VCB= -120 V

BDV64C

IE= 0

Tj=150°C

VCB= -30 V

BDV64

-2

VCB= -40 V

BDV64A

VCB= -50 V

BDV64B

VCB= -60 V

BDV64C

VCEO

Collector-Emitter

Breakdown Voltage (*)

IC= -30 mA, IB = 0

BDV64

-60

BDV64A

-80

BDV64B

-100

BDV64C

-120

hFE

DC Current Gain (*)

VCE= -4 V, IC= -5 A

BDV64

1000

BDV64A

BDV64B

BDV64C

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= -5 A, IB= -20 mA

BDV64

-2

BDV64A

BDV64B

BDV64C

VBE

Base-Emitter

Voltage(*)

VCE= -4 V, IC= -5 A

BDV64

-2,5

BDV64A

BDV64B

BDV64C

(*) Pulse Width

≈ 300 µs, Duty Cycle ∠ 1.5 %

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