BDV66B datasheet(3/4 Pages) COMSET

3 / 4 page

BDV66-A-B-C

26/09/2012

COMSET SEMICONDUCTORS

3/4

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICEO

Collector Cutoff

Current

VCE= -40 V, IB= 0

BDV66

-1

VCE= -50 V, IB= 0

BDV66A

VCE= -60 V, IB= 0

BDV66B

VCE= -70 V, IB= 0

BDV66C

IEBO

Emitter Cutoff

Current

VBE= -5 V, IC= 0

BDV66

-5

BDV66A

BDV66B

BDV66C

ICBO

Collector Cutoff

Current

IE= 0

Tj=25°C

VCB= -80 V

BDV66

-1

VCB= -100 V

BDV66A

VCB= -120 V

BDV66B

VCB= -140 V

BDV66C

IE= 0

Tj=150°C

VCB= -40 V

BDV66

-5

VCB= -50 V

BDV66A

VCB= -60 V

BDV66B

VCB= -70 V

BDV66C

VCEO

Collector-Emitter

Breakdown Voltage

(*)

IC= -100 mA, IB = 0

BDV66

-60

BDV66A

-80

BDV66B

-100

BDV66C

-120

hFE

DC Current Gain (*)

VCE= -3 V, IC= -10 A

BDV66

1000

BDV66A

BDV66B

BDV66C

VCE(SAT)

Collector-Emitter

saturation Voltage (*) IC= -10 A, IB= -40 mA

BDV66

-2

BDV66A

BDV66B

BDV66C

VBE

Base-Emitter

Voltage(*)

VCE= -3 V, IC= -10 A

BDV66

-2,5

BDV66A

BDV66B

BDV66C

COB

Output Capacitance

VCB= -10 V, IE= 0

ftest= 1 MHz

BDV66

300

BDV66A

BDV66B

BDV66C

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