BSX63 datasheet(2/3 Pages) COMSET

2 / 3 page

N BSX62-BSX63

26/09/2012

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwise specified

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

ICBO

Collector Cutoff Current

VCB = 40 V, IE =0

BSX62

100

VCB = 60 V, IE =0

BSX63

VCB = 40 V, IE = 0

Tj = 150°C

BSX62

100

µA

VCB = 60 V, IE =0

Tj = 150°C

BSX63

IEBO

Emitter Cutoff Current

VBE = 5.0 V, IC =0

100

VCE(SAT)

Collector-Emitter

saturation Voltage

IC = 1 A, IB = 100 mA

0.7

IC = 2 A, IB = 200 mA

0.8

VBE(SAT)

Base-Emitter saturation

Voltage

IC = 1 A, IB = 100 mA

1.2

IC = 2 A, IB = 200 mA

1.3

VBE

Base-Emitter Voltage

IC = 100 mA, VCE = 1 V

IC = 1 A, VCE = 1 V

1.2

IC = 2 A, VCE = 5 V

1.3

hFE

DC Current Gain

IC = 100 m

VCE = 1 V

BSX62/10

110

BSX63/10

BSX62/16

180

BSX63/16

IC = 1 A

VCE = 1 V

BSX62/10

100

160

BSX63/10

BSX62/16

100

160

250

BSX63/16

IC = 2 A

VCE = 1 V

BSX62/10

BSX63/10

BSX62/16

120

BSX63/16

Transition frequency

IC = 200 mA, VCE = 10 V

f = 100MHz

MHz

Collector capacitance

IE = ie =0, VCB = 10 V

f = 1MHz

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