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BT152 Datasheet(PDF) 2 Page - Comset Semiconductor

Part # BT152
Description  THYRISTORS
PDF  3 Pages
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Manufacturer  COMSET [Comset Semiconductor]
Direct Link  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

BT152 Datasheet(HTML) 2 Page - Comset Semiconductor

  BT152 Datasheet HTML 1Page - Comset Semiconductor BT152 Datasheet HTML 2Page - Comset Semiconductor BT152 Datasheet HTML 3Page - Comset Semiconductor  
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BT152 Series
26/09/2012
COMSET SEMICONDUCTORS
2 | 3
SEMICONDUCTORS
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max Unit
VDRM
Repetitive peak
off-state voltage
BT152-400R
450
-
-
V
BT152-600R
650
-
-
BT152-800R
800
-
-
VRRM
Repetitive peak reverse
voltage
BT152-400R
450
-
-
BT152-600R
650
-
-
BT152-800R
800
-
-
IGT
Gate trigger current
VD = 12 V; IT = 100 mA
-
-
32
mA
VGT
Gate trigger voltage
VD = 12 V; IT = 100 mA
-
-
1.5
V
IL
Latching current
VD = 12 V; IGT = 100 mA
-
-
80
mA
IH
Holding current
VD = 12 V; IGT = 100 mA
-
-
60
mA
ID
Off-state current
VD = VDRM max; Tj = 125°C
-
-
1
mA
IR
Reverse current
VR = VRRM max; Tj = 125°C
-
-
1
mA
VT
On-state voltage
IT = 40 A
-
-
1.75
V
DYNAMIC CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max Unit
dVD/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRMmax
Tj = 125°C
Exponential waveform; gate
open circuit
200
300
-
V/µs
tgt
Gate controlled
turn-on time
ITM = 40 A; VD = VDRMmax
IG = 0.1 A; dIG/dt = 5 A/µs
-
2
-
µs
tq
Circuit commutated
Turn-off time
VDM = 67% VDRMmax
Tj = 125°C
ITM = 50 A; VR = 25 V
RGK = 100 Ω
dITM/dt = 30 A/µs
dVD/dt = 50 V/µS
-
70
-
µs



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