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BR3F Datasheet(PDF) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD

Part # BR3F
Description  3.0kV 1.0A HIGH VOLTAGE DIODES
PDF  1 Pages
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Manufacturer  GETEDZ [GETAI ELECTRONICS DEVICE CO., LTD]
Direct Link  http://www.hvgtsemi.com
Logo GETEDZ - GETAI ELECTRONICS DEVICE CO., LTD

BR3F Datasheet(HTML) 1 Page - GETAI ELECTRONICS DEVICE CO., LTD

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Mark
3.0kV 1.0A HIGH VOLTAGE DIODES
Maximum Reverse Recovery Time
Trr
at 25°C
BR3F
Features
High speed switching
High Current
High surge resisitivity for CRT discharge
High reliability design
High Voltage
Applications
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Items
Repetitive Peak Renerse Voltage
Average Output Current
Suege Current
Junction Temperature
Allowable Operation Case Temperature
Symbols
VRRM
IO
IFSM
Tj
Tc
Condition
Ta=25°C,Resistive Load
1.0
155
125
-40 to +155
Units
kV
A
A peak
°C
°C
°C
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Items
Maximum Forward Voltage Drop
Maximum Reverse Current
Symbols
VF
IR1
IR2
Conditions
at 25°C,IF
at 25°C,VR
at 100°C,V
Units
V
uA
uA
Junction Capacitance
Cj
at 25°C,VR
Storage Temperature
Tstg
is high reliability resin molded type high voltage
diode in small size package which is sealed a multilayed
mesa type silicon chip by epoxy resin.
Outline Drawings : mm
BR3F
Cathode Mark
27 min.
27 min.
9.0
o 5.0
o 1.28
Cathode Mark
Lot No.
GETE ELECTRONICS CO.,LTD
Http://www.getedz.com
E-mail:sales@getedz.com
2012
=0V,f=1MHz
--
BR3F
Type
BR3F
BR3F
9.0
50
5.0
20
3.0
X light Power supply
Laser
Voltage doubler circuit
Microwave emission power
pF
HVCA
TM
=VRRM
R
=VRRM
150
nS
peak
=IF(AV)


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