IRF830 datasheet(2/3 Pages) COMSET

2 / 3 page

IRF830

2/3

09/11/2012

COMSET SEMICONDUCTORS

SEMICONDUCTORS

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

VDSS

Drain-Source Breakdown

Voltage

ID= 250 µA, VGS= 0 V

500

VGS(th)

Gate-threshold Voltage

ID= 250 µA, VGS= VDS

IDSS

Zero Gate Voltage Drain

Current

VDS= 500 V, VGS= 0 V

Tj= 25 °C

µA

VDS= 500 V, VGS= 0 V

Tj= 125 °C

250

IGSS

Gate-Source leakage

Current

VGS= 20 V, VDS= 0 V

100

RDS(on)

Drain-Source on Resistance

ID= 2.7 A, VGS= 10 V

1.5

Ω

DYNAMIC CHARACTERISTICS

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

gfs

Transconductance

VDS >ID(on)*RDS(on)max

ID= 2.5 A

2.5

CISS

Input Capacitance

VGS= 0 V, VDS= 25 V

f= 1MHz

800

COSS

Output Capacitance

200

CRSS

Reverse transfer

Capacitance

td(on)

Turn-on Delay Time

VDD= 225 V,

ID= 2.5 A, RGS= 15 Ω

Rise time

td(off)

Turn-off Delay Time

Fall Time

REVERSE DIODE

Symbol

Ratings

Test Condition(s)

Min

Typ

Max

Unit

Inverse Diode Continuous

Forward Current.

TC = 25°C

4.5

ISM

Inverse diode direct current,

pulsed.

TC = 25°C

VSD

Inverse Diode Forward

voltage

VGS = 0 V, IF = 4.5 A

1.6

Trr

Reverse Recovery Time

IF = 3.1 A

di/dt = 100 A/µs

320

640

Qrr

Reverse Recovery Charge

µC

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