MJE13005 datasheet(1/3 Pages) COMSET

Part #	MJE13005

Description	SILICON POWER TRANSISTORS

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Manufacturer	COMSET [Comset Semiconductor]

Direct Link	http://comset.halfin.com

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MJE13005

02/10/2012

COMSET SEMICONDUCTORS

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SEMICONDUCTORS

SILICON POWER TRANSISTORS

NPN power transistors in a TO-220 package. They are intended for high voltage, high speed

power switching inductive circuits where fall time is critical. They are particularly suited for

115V and 220V SWITCHMODE applications such as switching regulator’s, inverters, motor

controls, solenoid/relay drivers and deflection circuits

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

VCEO

Collector-Emitter Voltage

400

V

VCBO

Collector-Base Voltage

700

V

VEBO

Emitter-Base Voltage

9

V

IC

Collector Current

4

A

ICM

Collector Peak Current (*)

8

A

IB

Base Current

2

A

IBM

Base Peak Current (*)

4

A

IE

Emitter Current

6

A

IEM

Emitter Peak Current (*)

12

A

PT

Power Dissipation at Case Temperature

@ Tmb < 25°

75

W

Power Dissipation at free Air Temperature

2

tJ

Junction Temperature

150

°C

ts

Storage Temperature range

-65 to +150

(*)Pulse Width = 5ms, duty cycle <10%.

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJC

From Junction to Case Thermal Resistance

1.67

°C/W

RthJA

From Junction to Free-Air Thermal Resistance

62.5

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