TIP150

15/10/2012

COMSET SEMICONDUCTORS

1/3

09/11/2012

SEMICONDUCTORS

SILICON DARLINGTON POWER TRANSISTORS

NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220

enveloppe.

High voltage, high forward and reverse energy designed for industrial and consumer

applications.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

Collector-Base Voltage

300

V

Collector-Emitter Voltage

300

V

Emitter-Base Voltage

8

V

Collector Current

7

A

Collector Peak Current (1)

10

A

Base Current

1.5

A

Power Dissipation at Case

Temperature (2)

80

Watts

Power Dissipation at free Air

Temperature (3)

2

Junction Temperature

-65 to +150

°C

Storage Temperature range

-65 to +150

Lead Temperature 3.2 mm from case for 10 seconde

260

1.

2.

Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.

3.

Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

From Junction to Case Thermal Resistance

2.5

°C/W

From Junction to Free-Air Thermal Resistance

62.5